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BQ2205LYPWRG4

  • 描述:控制器种类: Nonvolatile SRAM 电源电压: 3V~3.6V 供应商设备包装: 16-TSSOP 工作温度: -20摄氏度~70摄氏度 安装类别: 表面安装
  • 品牌: 德州仪器 (Texas)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2000

数量 单价 合计
1+ 22.93161 22.93161
200+ 8.88048 1776.09660
500+ 8.56520 4282.60000
1000+ 8.41806 8418.06800
  • 库存: 0
  • 单价: ¥22.93162
  • 数量:
    - +
  • 总计: ¥16,836.14
在线询价

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规格参数

  • 制造厂商 德州仪器 (Texas)
  • 控制器种类 Nonvolatile SRAM
  • 安装类别 表面安装
  • 电源电压 3V~3.6V
  • 部件状态 可供货
  • 工作温度 -20摄氏度~70摄氏度
  • 包装/外壳 16-TSSOP(0.173“,4.40毫米宽)
  • 供应商设备包装 16-TSSOP

BQ2205LYPWRG4 产品详情

The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory.

A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM.

Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system. During power-valid operation, the input decoder, A, selects one of two banks of SRAM.

Feature

  • Power Monitoring and Switching for Non-Volatile Control of SRAMs
  • Input Decoder Allows Control of 1 or 2 Banks of SRAM
  • Write-Protect Control
  • 3-V Primary Cell Input
  • 3.3-V Operation
  • Reset Output for System Power-On Reset
  • Less than 20-ns Chip Enable Propagation Delay
  • Small 16-Lead TSSOP Package
  • APPLICATIONS
    • NVSRAM Modules
    • Point-of-Sale Systems
    • Facsimile, Printers and Photocopiers
    • Internet Appliances
    • Servers
    • Medical Instrumentation and Industrial Products
Description

The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory.

A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM.

Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system. During power-valid operation, the input decoder, A, selects one of two banks of SRAM.

BQ2205LYPWRG4所属分类:内存控制器,BQ2205LYPWRG4 由 德州仪器 (Texas) 设计生产,可通过久芯网进行购买。BQ2205LYPWRG4价格参考¥22.931615,你可以下载 BQ2205LYPWRG4中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询BQ2205LYPWRG4规格参数、现货库存、封装信息等信息!

德州仪器 (Texas)

德州仪器 (Texas)

德州仪器公司(TI)是一家开发模拟IC和嵌入式处理器的全球半导体设计和制造公司。通过雇用世界上最聪明的人,TI创造了塑造技术未来的创新。如今,TI正在帮助超过10万名客户改变未来。

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