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CY62128ELL-45ZXI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 1Mb (128K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 32-TSOP I
  • 品牌: 英飞凌 (Infineon)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 14.18377 14.18377
  • 库存: 71857
  • 单价: ¥14.18377
  • 数量:
    - +
  • 总计: ¥14.18
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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 储存接口 并联
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 电源电压 4.5伏~5.5伏
  • 制造厂商 英飞凌 (Infineon)
  • 存储容量 1Mb (128K x 8)
  • 单字、单页写入耗时 45ns
  • 访达时期 45纳秒
  • 包装/外壳 32-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 32-TSOP I

CY62128ELL-45ZXI 产品详情

The CY62128ELL-45ZXI is a 1MB high performance CMOS Static Random Access Memory (SRAM) organized as 128K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or a write operation is in progress. To write to the device, take chip enable and write enable inputs LOW. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.

Feature

  • Very high speed - 45ns
  • Pin compatible with CY62128B
  • Ultralow standby power
  • Ultralow active power
  • Easy memory expansion with CE1, CE2 and OE
  • Automatic power down when deselected
  • CMOS for optimum speed/power
CY62128ELL-45ZXI所属分类:存储器,CY62128ELL-45ZXI 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY62128ELL-45ZXI价格参考¥14.183771,你可以下载 CY62128ELL-45ZXI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY62128ELL-45ZXI规格参数、现货库存、封装信息等信息!
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