CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. These devices have an automatic power down feature, reducing the power consumption by over 99% when deselected. An active LOW write enable signal (WE) controls the writing/reading operation of the memory.
When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The input/output pins remain in a high impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.
Feature
■ Temperature ranges
❐ Commercial: 0 °C to +70 °C
❐ Industrial: –40 °C to +85 °C
❐ Automotive-A: –40 °C to +85 °C
❐ Automotive-E: –40 °C to +125 °C
■ Speed: 70 ns
■ Low voltage range: 2.7 V to 3.6 V
■ Low active power and standby power
■ Easy memory expansion with CE and OE features
■ TTL compatible inputs and outputs
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Available in standard Pb-free and non Pb-free 28-pin (300-mil) narrow SOIC, 28-pin TSOP-I, and 28-pin reverse TSOP-I packages
