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CY7C109BNL-15VCT

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 1Mb (128K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 32-SOJ
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 108

数量 单价 合计
108+ 20.28012 2190.25296
  • 库存: 750
  • 单价: ¥20.28012
  • 数量:
    - +
  • 总计: ¥2,190.25
在线询价

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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 储存接口 并联
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 电源电压 4.5伏~5.5伏
  • 单字、单页写入耗时 15纳秒
  • 制造厂商 英飞凌 (Infineon)
  • 工作温度 0摄氏度~70摄氏度(TA)
  • 存储容量 1Mb (128K x 8)
  • 包装/外壳 32-BSOJ (0.400", 10.16毫米 Width)
  • 供应商设备包装 32-SOJ
  • 访达时期 15纳秒

CY7C109BNL-15VCT 产品详情


The CY7C109BNL-15VCT / CY7C1009 is a high-performance CMOS stat ic RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking chip enable one (CE1) and output enable (OE) LOW while forcing write enable (WE) and chip enable two (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

 

Feature

• High speed
— tAA = 10 ns
• Low active power
— 1017 mW (max., 12 ns)
• Low CMOS standby power
— 55 mW (max.), 4 mW (Low power version)
• 2.0V Data Retention (Low power version)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options

CY7C109BNL-15VCT所属分类:存储器,CY7C109BNL-15VCT 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY7C109BNL-15VCT价格参考¥20.280120,你可以下载 CY7C109BNL-15VCT中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY7C109BNL-15VCT规格参数、现货库存、封装信息等信息!
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