The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Feature
• Very high speed: 45 ns
— Industrial: –40°C to +85°C
— Automotive-E: –40°C to +125°C
• Wide voltage range: 4.5V–5.5V
• Ultra low standby power
— Typical Standby current: 2 µA
— Maximum Standby current: 8 µA (Industrial)
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Ultra low standby power
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package
