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The CY62147DV18LL-55BVI is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption.
Feature
• Very high speed: 55 ns and 70 ns
• Wide voltage range: 1.65V – 2.25V
• Pin-compatible with CY62147CV18
• Ultra-low active power
— Typical active current: 1 mA @ f = 1 MHz
— Typical active current: 6 mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE, and OE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered 48-ball BGA
