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AT25DF021A-SSHN-T

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 2Mb (256K x 8) 电源电压: 1.65伏~3.6伏 时钟频率: 104兆赫 供应商设备包装: 8-SOIC
  • 品牌: 阿德斯托 (Adesto)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 4.08137 4.08137
  • 库存: 307035
  • 单价: ¥4.08137
  • 数量:
    - +
  • 总计: ¥4.08
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 制造厂商 阿德斯托 (Adesto)
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 工作温度 -40摄氏度~85摄氏度(TC)
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 供应商设备包装 8-SOIC
  • 时钟频率 104兆赫
  • 存储容量 2Mb (256K x 8)
  • 电源电压 1.65伏~3.6伏
  • 单字、单页写入耗时 8s, 2.5ms

AT25DF021A-SSHN-T 产品详情

The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.

Feature


• Single 2.3V - 3.6V or 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 66 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature
– Four Sectors of 64 Kbytes Each
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 450 ms Typical 64-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 7 mA Active Read Current (Typical at 20 MHz)
– 15 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)

AT25DF021A-SSHN-T所属分类:存储器,AT25DF021A-SSHN-T 由 阿德斯托 (Adesto) 设计生产,可通过久芯网进行购买。AT25DF021A-SSHN-T价格参考¥4.081374,你可以下载 AT25DF021A-SSHN-T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询AT25DF021A-SSHN-T规格参数、现货库存、封装信息等信息!

阿德斯托 (Adesto)

阿德斯托 (Adesto)

Adesto 成立于2007年,专门开发创新,低功耗的内存解决方案,名为导电桥式内存 (CBRAM)。这项特别技术有别于一般的内存,能针对多种应用做客制化,在过去3年,Adesto已将内建式内存技术授权...

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