*Not Recommended For New Design*The SST39VF800A-70-4I-B3KE is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800A-70-4I-B3KE writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Please consider this deviceSST39VF801C,SST39VF802C
Feature
- Organized as 512K x16
- Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A
- Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
- Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
- Sector-Erase Capability– Uniform 2 KWord sectors
- Block-Erase Capability– Uniform 32 KWord blocks
- Fast Read Access Time– 70 ns for SST39VF800A
- Latched Address and Data
- Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A
- Automatic Write Timing– Internal VPP Generation
- End-of-Write Detection– Toggle Bit– Data# Polling
- CMOS I/O Compatibility
- JEDEC Standard– Flash EEPROM Pinouts and command sets
- Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
- All non-Pb (lead-free) devices are RoHS compliant
