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S25FL116K0XNFIQ13

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 108兆赫 供应商设备包装: 8-WSON (5x6)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 417

数量 单价 合计
417+ 4.34574 1812.17358
  • 库存: 8000
  • 单价: ¥4.34574
  • 数量:
    - +
  • 总计: ¥1,812.17
在线询价

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规格参数

  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 储存接口 SPI - Quad I/O
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 8-WDFN Exposed Pad
  • 制造厂商 英飞凌 (Infineon)
  • 单字、单页写入耗时 3毫秒
  • 存储容量 16Mb (2M x 8)
  • 供应商设备包装 8-WSON (5x6)
  • 时钟频率 108兆赫
  • 部件状态 过时的

S25FL116K0XNFIQ13 产品详情

Features
■Serial Peripheral Interface(SPI)
  -SPI Clock polarity and phase modes 0 and 3
  -Command subset and footprint compatible with S25FL016K Read
  -Normal Read(Serial):50 MHz clock rate
  -Fast Read(Serial):108 MHz clock rate
  -Dual/Quad(Multi-l/O)Read 108 MHz clock rate
  -54MB/s maximum continuous data transfer rate
  -Efficient eXecute-In-Place(XIP)
  -Continuous and wrapped read modes
  -Serial Flash Discoverable Parameters(SFDP) Program
  -Serial-input Page Program(up to 256 bytes)
  -Program Suspend and Resume
■Erase
  -Uniform sector erase (4kB)
  -Uniform block erase(64kB)
  -Bulk erase
  -Erase Suspend and Resume
■Cycling Endurance
  -100K Program-Erase cycles on any sector,minimum
■Data Retention
  -20-year data retention,typical

■Security

  -Three 256-byte Security Registers with OTP protection
  -Low supply voltage protection of the entire memory
  -Top/Bottom relative Block Protection Range,4 kB to all of memory
  -8-Byte Unique ID for each device
  -Non-volatile Status Register bits control protection modes
  -Software command protection
  -Hardware input signal protection
  -Lock-Down until power cycle protection
  -OTP protection of security registers 90 nm Floating Gate Technology Single Supply Voltage:2.7V to 3.6V
■Temperature Ranges
  -Industrial(-40℃ to+85℃)
  -Automotive(-40℃ to+105℃)
■Package Options
  -S25FL116K
  -8-lead SOIC(150 mil)-SOA008-8-lead SOIC(208 mil)-SOC008
  -8-contact WSON5x6-WND008
  -24-ball BGA 6 mm × 8 mm-FAB024 and FAC024
  -KGD/KGW
General Description
The S25FL116K of the FL1-K family non-volatile flash memory devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (SIngle I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial protocols. This multiple width interface is called SPI Multi-I/O or MIO.
The SPI-MIO protocols use only 4 to 6 signals: 
 Chip Select (CS#) 
 Serial Clock (CLK) 
 Serial Data 
  – IO0 (SI) 
  – IO1 (SO)
  – IO2 (WP#) 
  – IO3 (HOLD#)
The SIO protocol uses Serial Input (SI) and Serial Output (SO) for data transfer. The DIO protocols use IO0 and IO1 to input or output two bits of data in each clock cycle.
The Write Protect (WP#) input signal option allows hardware control over data protection. Software controlled  commands can also manage data protection. 
The HOLD# input signal option allows commands to be suspended and resumed on any clock cycle.
The QIO protocols use all of the data signals (IO0 to IO3) to transfer 4 bits in each clock cycle. When the QIO  protocols are enabled the WP# and HOLD# inputs and features are disabled. Clock frequency of up to 108 MHz is supported, allowing data transfer rates up to:
 Single bit data path = 13.5 Mbytes/s
 Dual bit data path = 27 Mbytes/s
 Quad bit data path = 54 Mbytes/s
Executing code directly from flash memory is often called eXecute-In-Place or XIP. By using S25FL116K devices at the higher clock rates supported, with QIO commands, the command read transfer rate can match or exceed traditional x8 or x16 parallel interface, asynchronous, NOR flash memories, while reducing signal count dramatically. The Continuous Read Mode allows for random memory access with as few as 8-clocks of overhead for each access, providing efficient XIP operation. The Wrapped Read mode provides efficient instruction or data cache refill via a fast read of the critical byte that causes a cache miss, followed by reading 
all other bytes in the same cache line in a single read command.
The S25FL116K:
 Support JEDEC standard manufacturer and device type identification.
 Program pages of 256 bytes each. One to 256 bytes can be programmed in each Page Program operation. Pages can be erased in groups of 16 (4-kB aligned sector erase), groups of 256 (64-kB aligned block erase), or the entire chip (chip erase).
 The S25FL116K operates on a single 2.7V to 3.6V power supply and all devices are offered in spacesaving packages.
 Provides an ideal storage solution for systems with limited space, signal connections, and power. These 
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data.


(Picture:Pinout / Diagram)

S25FL116K0XNFIQ13所属分类:存储器,S25FL116K0XNFIQ13 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。S25FL116K0XNFIQ13价格参考¥4.345740,你可以下载 S25FL116K0XNFIQ13中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询S25FL116K0XNFIQ13规格参数、现货库存、封装信息等信息!
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