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SST39SF020A-70-4I-NHE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 2Mb (256K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 32-PLCC(11.43x13.97)
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 15.94886 15.94886
  • 库存: 1400
  • 单价: ¥15.94887
  • 数量:
    - +
  • 总计: ¥15.95
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 时钟频率 -
  • 电源电压 4.5伏~5.5伏
  • 访达时期 70 ns
  • 存储容量 2Mb (256K x 8)
  • 单字、单页写入耗时 20s
  • 包装/外壳 32-LCC(J引线)
  • 供应商设备包装 32-PLCC(11.43x13.97)

SST39SF020A-70-4I-NHE 产品详情

The SST39SF020A-70-4I-NHE is a 2MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.

Feature

  • Superior reliability
  • Low power consumption
  • Sector-erase capability - uniform 4Kbyte word sectors
  • Fast read access time - 70ns
  • Latched address and data
  • Automatic write timing - internal VPP generation
  • Fast erase and byte-program
  • End-of-write detection
  • TTL I/O compatibility
SST39SF020A-70-4I-NHE所属分类:存储器,SST39SF020A-70-4I-NHE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST39SF020A-70-4I-NHE价格参考¥15.948866,你可以下载 SST39SF020A-70-4I-NHE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST39SF020A-70-4I-NHE规格参数、现货库存、封装信息等信息!
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