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CY7C131E-55NXC
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CY7C131E-55NXC

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 8Kb (1K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 52-PQFP (10x10)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 9

数量 单价 合计
14+ 136.16652 1906.33128
  • 库存: 64
  • 单价: ¥269.07374
  • 数量:
    - +
  • 总计: ¥2,421.66
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规格参数

  • 存储类型 Volatile
  • 储存接口 并联
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 电源电压 4.5伏~5.5伏
  • 制造厂商 英飞凌 (Infineon)
  • 工作温度 0摄氏度~70摄氏度(TA)
  • 存储容量 8Kb (1K x 8)
  • 访达时期 55 ns
  • 单字、单页写入耗时 55ns
  • 部件状态 过时的
  • 技术 SRAM-双端口,异步
  • 包装/外壳 52-BQFP
  • 供应商设备包装 52-PQFP (10x10)

CY7C131E-55NXC 产品详情

The CY7C130/CY7C131/CY7C140 and CY7C141 are high-speed CMOS 1K by 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C130/ CY7C131E-55NXC can be utilized as either a standalone 8-bit dual-port static RAM or as a master dual-port RAM in conjunction with the CY7C140/CY7C141 slave dual-port device in systems requiring 16-bit or greater word widths. It is the solution to applications requiring shared or buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.

 

Feature

• True Dual-Ported memory cells which allow simultaneous reads of the same memory location
• 1K x 8 organization
• 0.65-micron CMOS for optimum speed/power
• High-speed access: 15 ns
• Low operating power: ICC = 110 mA (max.)
• Fully asynchronous operation
• Automatic power-down
• Master CY7C130/CY7C131 easily expands data bus width to 16 or more bits using slave CY7C140/CY7C141
• BUSY output flag on CY7C130/CY7C131; BUSY input on CY7C140/CY7C141
• INT flag for port-to-port communication
• Available in 48-pin DIP (CY7C130/140), 52-pin PLCC, 52-Pin TQFP.
• Pb-Free packages available

CY7C131E-55NXC所属分类:存储器,CY7C131E-55NXC 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY7C131E-55NXC价格参考¥269.073735,你可以下载 CY7C131E-55NXC中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY7C131E-55NXC规格参数、现货库存、封装信息等信息!
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