The CY62168EV30 is a high performance CMOS static RAM organized as 2M words by 8 bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.
Feature
• Very high speed: 45 ns
• Wide voltage range: 2.20V – 3.60V
• Ultra low standby power
— Typical standby current: 1.5 µA
— Maximum standby current: 12 µA
• Ultra low active power
— Typical active current: 2.2 mA @ f = 1 MHz
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed/power
• Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package, refer to CY62167EV30 data sheet.
