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23LC1024-E/P

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 1Mb (128K x 8) 电源电压: 2.5伏~5.5伏 时钟频率: 16兆赫 供应商设备包装: 8-PDIP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 65.46335 65.46335
200+ 25.33827 5067.65580
500+ 24.44497 12222.48800
1000+ 24.00357 24003.57900
  • 库存: 188
  • 单价: ¥65.46335
  • 数量:
    - +
  • 总计: ¥65.46
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Volatile
  • 单字、单页写入耗时 -
  • 访达时期 -
  • 存储格式 SRAM
  • 储存接口 SPI - Quad I/O
  • 安装类别 通孔
  • 电源电压 2.5伏~5.5伏
  • 工作温度 -40摄氏度~125摄氏度(TA)
  • 存储容量 1Mb (128K x 8)
  • 包装/外壳 8-DIP (0.300", 7.62毫米)
  • 技术 SRAM
  • 供应商设备包装 8-PDIP
  • 时钟频率 16兆赫

23LC1024-E/P 产品详情

The Microchip Technology Inc. 23A1024/23LC1024-E/P are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array.The 23A1024/23LC1024-E/P is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Feature

  • SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
  • Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
  • Unlimited Read and Write Cycles
  • Zero Write Time
  • 128K x 8-bit Organization:- 32-byte page
  • Byte, Page and Sequential mode for Reads andWrites
  • High Reliability
  • Pb-Free and RoHS Compliant, Halogen Free
  • 8 Lead SOIC, TSSOP and PDIP Packages
  • Temp Range: -40°C to +85°C
23LC1024-E/P所属分类:存储器,23LC1024-E/P 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。23LC1024-E/P价格参考¥65.463351,你可以下载 23LC1024-E/P中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询23LC1024-E/P规格参数、现货库存、封装信息等信息!
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