Description
The M24256-DRE is a 256-Kbit serial EEPROM device operating up to 105C. The M24256-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2.
The device is accessed by a simple serial 12c compatible interface running up to 1 MHz.
The memory array is based on advanced true EEPROM technology(electrically erasable programmable memory). The M24256-DRE is a byte-alterable memory(32K× 8 bits) organized as 512 pages of 64 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic.
The M24256-DRE offers an additional ldentification Page (64 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.
Features
• Compatible with all I2C bus modes– 1 MHz
– 400 kHz
– 100 kHz
• Memory array
– 256 Kbits (32 Kbytes) of EEPROM
– Page size: 64 bytes
– Additional Write lockable page (Identification page)
• Extended temperature and voltage range
– -40 °C to 105 °C; 1.7 V to 5.5 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time
– Byte Write within 4 ms
– Page Write within 4 ms
• Write cycle endurance
– 4 million Write cycles at 25 °C
– 1.2 million Write cycles at 85 °C
– 900 k Write cycles at 105 °C
• Data retention
– more than 50 years at 105 °C
– 200 years at 55 °C
• ESD Protection (Human Body Model)
– 4000 V
• Packages
– RoHS compliant and halogen-free (ECOPACK2®)
Feature
• Compatible with all I2C bus modes:
– 1 MHz
– 400 kHz
– 100 kHz
• Memory array:
– 256 Kbit (32 Kbyte) of EEPROM
– Page size: 64 byte
– Additional Write lockable page (M24256-D order codes)
• Single supply voltage and high speed:
– 1 MHz clock from 1.7 V to 5.5 V
• Write:
– Byte Write within 5 ms
– Page Write within 5 ms
• Operating temperature range:
– from -40 °C up to +85 °C
• Random and sequential Read modes
• Write protect of the whole memory array
• Enhanced ESD/Latch-Up protection
• More than 4 million Write cycles
• More than 200-years data retention
(Picture:Pinout / Diagram)
