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CY7C2663KV18-550BZI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 144Mb (8M x 18) 电源电压: 1.7伏~1.9伏 时钟频率: 550 MHz 供应商设备包装: 165-FBGA (15x17)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 45
  • 单价: ¥1,220.79080
  • 数量:
    - +
  • 总计: ¥1,220.79
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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 储存接口 并联
  • 单字、单页写入耗时 -
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 访达时期 -
  • 存储格式 SRAM
  • 制造厂商 英飞凌 (Infineon)
  • 电源电压 1.7伏~1.9伏
  • 包装/外壳 165-LBGA
  • 技术 SRAM-同步,QDR II+
  • 存储容量 144Mb (8M x 18)
  • 供应商设备包装 165-FBGA (15x17)
  • 时钟频率 550 MHz

CY7C2663KV18-550BZI 产品详情


The CY7C2663KV18-550BZI is a high-performance 8192-word by 8-bit CMOS PROM. When deselected, the CY7C2663KV18-550BZI automatically powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Feature

• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
• Low power
— 660 mW (Commercial)
• Super low standby power
— Less than 85 mW when deselected
• EPROM technology 100% programmable
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for 27C64 EPROMs

CY7C2663KV18-550BZI所属分类:存储器,CY7C2663KV18-550BZI 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY7C2663KV18-550BZI价格参考¥1220.790795,你可以下载 CY7C2663KV18-550BZI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY7C2663KV18-550BZI规格参数、现货库存、封装信息等信息!
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