High-performance 256K EEPROM offers access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA .It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Feature
- Fast read access time - 150ns
- Automatic page write operation
- Internal control timer
- Fast write cycle times
- Low power dissipation
- Hardware and software data protection
- Data polling for end of write detection
- High reliability CMOS technology
- Endurance - 10⁴ or 10⁵ cycles
- Data retention - 10 years
- CMOS and TTL Compatible inputs and outputs
- JEDEC Approved byte-wide pinout
- Green product and no Sb/Br