Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual-I/O Operation
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Small (256-Byte) Page Erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Uniform 64-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Dual-Input Byte/Page Program (1 to 256 Bytes)
Sequential Program Mode Capability
Fast Program and Erase Times
1.25ms Typical Page Program (256 Bytes) Time
35ms Typical 4-Kbyte Block Erase Time
250ms Typical 32-Kbyte Block Erase Time
450ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
4.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
8-lead TSSOP Package
8-ball WLCSP (3 x 2 x 3 ball matrix)
Description
The Adesto® AT25DF041B is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution.
The flexible erase architecture of the AT25DF041B, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the AT25DF041B have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.
The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the AT25DF041B supports read, program, and erase operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.
(Picture:Pinout / Diagram)
