The CY62167DV18LL-55BVI is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99% when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:
• Deselected (CE1 HIGH or CE2 LOW)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable (BHE) and Byte Low Enable (BLE) are disabled (BHE, BLE HIGH)
• Write operation is active (CE1 LOW, CE2 HIGH and WELOW)
Feature
• Very high speed: 55 ns
• Wide voltage range: 1.65V–1.95V
• Ultra low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 15 mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE1, CE2, and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 48-ball VFBGA package
