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SST26VF016B-104V/SM

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 104兆赫 供应商设备包装: 8-SOIJ
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 15.08105 15.08105
200+ 5.84325 1168.65060
500+ 5.63306 2816.53200
1000+ 5.53847 5538.47900
  • 库存: 342
  • 单价: ¥15.08106
  • 数量:
    - +
  • 总计: ¥15.08
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 储存接口 SPI - Quad I/O
  • 电源电压 2.7伏~3.6伏
  • 时钟频率 104兆赫
  • 包装/外壳 8-SOIC (0.209", 5.30毫米 Width)
  • 工作温度 -40摄氏度~105摄氏度(TA)
  • 存储容量 16Mb (2M x 8)
  • 单字、单页写入耗时 1.5毫秒
  • 供应商设备包装 8-SOIJ

SST26VF016B-104V/SM 产品详情

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory

The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features

Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure
x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency- 104 MHz Max
Burst Modes
Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)
Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)
Flexible Erase Capability
Software Write Protection

Feature

  • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol and SQI protocol
  • Burst Modes- Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around
  • Page-Program- 256 Bytes per page in x1 or x4 mode
  • Flexible Erase Capability- Uniform 4 KByte sectors, Four 8 KByte top and bottom parameter overlay blocks, One 32 KByte top and bottom overlay block, Uniform 64 KByte overlay blocks
  • Software Write Protection- Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
  • Low Power Consumption: Active Read current: 15 mA (typical @ 104 MHz), Standby Current: 15 µA (typical), Deep Power-Down Current: 2.5uA (typical)
  • SFDP (Serial Flash Discoverable Parameters)
  • Packages Available: 8-contact WDFN (6mm x 5mm), 8-lead SOIC, 8-lead SOIJ
  • All devices are RoHS compliant
  • Industrial -40C to +85C; Industrial Plus -40C to +105C; Extended -40C to +125C
  • Automotive AEC-Q100 Qualified
SST26VF016B-104V/SM所属分类:存储器,SST26VF016B-104V/SM 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST26VF016B-104V/SM价格参考¥15.081058,你可以下载 SST26VF016B-104V/SM中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST26VF016B-104V/SM规格参数、现货库存、封装信息等信息!
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