· Very high speed:45ns
· Wide voltage range:2.20V-3.60V
· Pin compatible with CY62138CV25/30/33
· Ultra low standby power
-Typical standby current:1uA-Maximum standby current:5uA
· Ultra low active power
-Typical active current:1.6mA@f=1MHz
· Easy memory expansion with CE1, CE2and OE features
· Automatic power down when deselected
· CMOS for optimum speed and power
· Offered in Pb-free 36-ball VFBGA,32-pin TSOP ll,32-pin SOIC,32-pin TSOP I and 32-pin STSOP packages
Functional Description [1]
The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life TM(MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected (CE1HIGH or CE2LOW).
To write to the device, take Chip Enable(CE1 LOW and CE2 HIGH) and Write Enable(WE) inputs LOW. Data on the eight IO pins(IOo through IO7) is then written into the location specified on the address pins(Ao through A17).
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing Write Enable(WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.
The eight input and output pins (IOo through IO,) are placedin a high impedance state when the device is deselected(CE1
HIGH or CE, LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE, HIGH and WE LOW).
(Picture:Pinout / Diagram)
