The SST39LF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.
Features 3.0-3.6V Read and Write Operations
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 5 mA, Standby Current 1 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39LF010 2 seconds, SST39SF020 4 seconds, SST39SF040 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets
Feature
- Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
- Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040
- Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
- Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
- Sector-Erase Capability– Uniform 4 KByte sectors
- Fast Read Access Time:– 55 ns for SST39LF020/040– 70 ns for SST39VF512/010/020/040
- Latched Address and Data
- Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040
- Automatic Write Timing– Internal VPP Generation
- End-of-Write Detection– Toggle Bit– Data# Polling
- CMOS I/O Compatibility
- JEDEC Standard– Flash EEPROM Pinouts and command sets
- Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
- All devices are RoHS compliant
