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SST39VF1601C-70-4I-EKE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (1M x 16) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 17.40736 17.40736
10+ 16.73791 167.37915
30+ 16.09407 482.82213
100+ 15.47512 1547.51290
500+ 14.87993 7439.96500
  • 库存: 240
  • 单价: ¥17.40737
  • 数量:
    - +
  • 总计: ¥17.41
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 时钟频率 -
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 48-TSOP
  • 访达时期 70 ns
  • 单字、单页写入耗时 10s
  • 存储容量 16Mb (1M x 16)

SST39VF1601C-70-4I-EKE 产品详情

PRODUCT DESCRIPTION
The SST39VF1601C and SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST39VF160xC writes (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:
· Organized as 1M x16: SST39VF1601C/1602C
· Single Voltage Read and Write Operations
   -2.7-3.6V
· Superior Reliability
   -Endurance:100,000 Cycles(Typical)
   -Greater than 100 years Data Retention
· Low Power Consumption(typical values at 5 MHz)
   -Active Current:9 mA(typical)
   -Standby Current:3 uA(typical)
   -Auto Low Power Mode:3 uA(typical)
· Hardware Block-Protection/WP# Input Pin
   -Top Block-Protection(top 8 KWord)
   -Bottom Block-Protection(bottom 8 KWord)
· Sector-Erase Capability
   -Uniform 2 KWord sectors
· Block-Erase Capability
   -Flexible block architecture; one 8-, two 4-, one 16-, and thirty one 32-KWord blocks
· Chip-Erase Capability
· Erase-Suspend/Erase-Resume Capabilities
· Hardware Reset Pin(RST#)· Latched Address and Data
·Security-ID Feature
  -SST:128 bits;User:128 words
·Fast Read Access Time: -70ns
·Fast Erase and Word-Program:
  -Sector-Erase Time:18 ms(typical)
  -Block-Erase Time:18 ms(typical)
  -Chip-Erase Time:40 ms(typical)
  -Word-Program Time:7 us(typical)
·Automatic Write Timing
  -Internal Vpp Generation
·End-of-Write Detection
  -Toggle Bits
  -Data# Polling
  -Ready/Busy# Pin
·CMOS /O Compatibility
·JEDEC Standard
  -Flash EEPROM Pinouts and command sets
·Packages Available
  -48-lead TSOP(12mm×20mm)
  -48-ball TFBGA(6mmx8mm)
  -48-ball WFBGA(4mm×6mm)
·All devices are RoHS compliant

Feature

  • Superior reliability
  • Low power consumption
  • Hardware block-protection/WP# input pin
  • Sector-erase capability - uniform 2K word sectors
  • Block-erase capability
  • Chip-erase capability
  • Erase-suspend/erase-resume capabilities
  • Hardware reset pin
  • Latched address and data
  • Security ID
  • Fast read access time - 70ns
  • Fast erase and word-program
  • Automatic write timing - internal VPP generation
  • End-of-write detection
  • CMOS I/O compatibility


(Picture:Pinout / Diagram)

SST39VF1601C-70-4I-EKE所属分类:存储器,SST39VF1601C-70-4I-EKE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST39VF1601C-70-4I-EKE价格参考¥17.407369,你可以下载 SST39VF1601C-70-4I-EKE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST39VF1601C-70-4I-EKE规格参数、现货库存、封装信息等信息!
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