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S25FL512SAGBHI210

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 512Mb (64M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 133兆赫 供应商设备包装: 24-BGA (8x6)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

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起订量: 1

数量 单价 合计
1+ 73.37057 73.37057
10+ 67.49658 674.96585
25+ 66.08711 1652.17792
40+ 65.85969 2634.38760
80+ 59.09576 4727.66104
230+ 57.30930 13181.13923
440+ 54.49702 23978.69232
  • 库存: 0
  • 单价: ¥68.59026
  • 数量:
    - +
  • 总计: ¥73.37
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规格参数

  • 部件状态 可供货
  • 时钟频率 133兆赫
  • 单字、单页写入耗时 -
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 存储容量 512Mb (64M x 8)
  • 储存接口 SPI - Quad I/O
  • 电源电压 2.7伏~3.6伏
  • 制造厂商 英飞凌 (Infineon)
  • 包装/外壳 24-TBGA
  • 供应商设备包装 24-BGA (8x6)

S25FL512SAGBHI210 产品详情

The S25FL512SAGBHI210 is a 512MB MirrorBit® Flash Non-Volatile Memory CMOS 3V core with versatile I/O serial peripheral interface with multi-I/O. Traditional SPI 1-bit serial input and output is supported as well as optional 2-bit and 4-bit serial commands. This multiple width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for double data rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. By using FL-S device at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.

Feature

  • SPI Clock polarity and phase modes 0 and 3
  • Serial command set and footprint compatible with S25FL-A, S25FL-K and S25FL-P SPI families
  • Multi I/O Command set and footprint compatible with S25FL-P SPI family
  • Common Flash Interface (CFI) data for configuration information
  • Quad-input page programming (QPP) for slow clock systems
  • Cycling endurance - 100000 program-erase cycles on any sector typical
  • Data retention - 20 years data retention typical
  • Status register bits to control protection against program/erase of a contiguous range of sectors
  • Advanced sector protection
  • Spansion® 65nm MirrorBit technology with Eclipse™ Architecture
S25FL512SAGBHI210所属分类:存储器,S25FL512SAGBHI210 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。S25FL512SAGBHI210价格参考¥68.590263,你可以下载 S25FL512SAGBHI210中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询S25FL512SAGBHI210规格参数、现货库存、封装信息等信息!
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