CY7C263-35WM

Features
·CMOS for optimum speed/power
·Windowed for reprogrammability
·High speed一20ns（Commercial）
一25ns（Military）
·Low power一660 mW（Commercial）
一770mW（Military）
·Super low standby power（7C261）
-Less than 220 mW when deselected一Fast access：20ns
·EPROM technology 100%programmable
·Slim 300-mil or standard 600-mil packaging available
·5V±10%Vcc，commercial and military
·Capable of withstanding greater than 2001V static discharge
·TTL-compatible I/O

·Direct replacement for bipolar PROMs

Functional Description
The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,the CY7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. 

The CY7C263-35WMB and CY7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down when deselected. The reprogrammable packages are equipped with an erasure window; when exposed to UV light,these PROMs are erased and can then be reprogrammed.
The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. 

The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. TheEPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification
limits.
Read is accomplished by placing an active LOW signal on CS.The contents of the memory location addressed by the address line (A0−A12) will become available on the output lines (O0−O7).

Feature

(Picture:Pinout / Diagram)