Functional Description
The CY62157ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), both the Byte High Enable and the Byte Low Enable are disabled (BHE, BLE HIGH), or during an active write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).
To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes.
Features
■ Very high speed: 45 ns
■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
■ Ultra low standby power
❐ Typical Standby current: 2 A
❐ Maximum Standby current: 8 A
■ Ultra low active power
❐ Typical active current: 1.8 mA at f = 1 MHz
■ Easy memory expansion with CE and OE features
■ Automatic power down when deselected
■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power
■ Available in Pb-free 44-pin thin small outline package (TSOP) II package
Feature
• Very high speed: 45 ns
— Industrial: –40°C to +85°C
— Automotive-E: –40°C to +125°C
• Wide voltage range: 4.5V–5.5V
• Ultra low standby power
— Typical Standby current: 2 µA
— Maximum Standby current: 8 µA (Industrial)
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Ultra low standby power
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package
(Picture: Pinout)
