The Spansion S29GL01G256P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming time for multiple-word updates
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
Uniform 64Kword/128KByte Sector Architecture
– S29GL256P: Two hundred fifty-six sectors
100,000 erase cycles per sector typical
20-year data retention typical
Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
Suspend and Resume commands for Program and Erase operations
Write operation status bits indicate program and erase operation completion
Unlock Bypass Program command to reduce programming time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector Protection
WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Feature
- VIO = VCC = 2.7V to 3.6V, highest address sector protected
- 8-word/16-byte page read buffer
- 100000 erase cycles per sector typical and 20year data retention typical
- Write operation status bits indicate program and erase operation completion
- Unlock bypass program command to reduce programming time
- Support for CFI (Common Flash Interface)
- Persistent and password methods of advanced sector protection
- Suspend and resume commands for program and erase operations
- Industrial temperature range from -40°C to +85°C
- WP#/ACC input, protects first or last sector regardless of sector protection settings
(Picture: Pinout)