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S29GL256P10TFI010

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 256Mb (32M x 8) 电源电压: 2.7伏~3.6伏 供应商设备包装: 56-TSOP
  • 品牌: 英飞凌 (Infineon)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 94.87929 94.87929
10+ 91.16946 911.69461
30+ 84.75869 2542.76091
  • 库存: 0
  • 单价: ¥94.87930
  • 数量:
    - +
  • 总计: ¥94.88
在线询价

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规格参数

  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 时钟频率 -
  • 技术 FLASH-NOR
  • 电源电压 2.7伏~3.6伏
  • 制造厂商 英飞凌 (Infineon)
  • 存储容量 256Mb (32M x 8)
  • 访达时期 100纳秒
  • 包装/外壳 56-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 56-TSOP
  • 单字、单页写入耗时 100ns

S29GL256P10TFI010 产品详情

Description
The Spansion S29GL01G256P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics 
„ Single 3V read/program/erase (2.7-3.6 V)
„ Enhanced VersatileI/O™ control
  – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65   to VCC
„ 90 nm MirrorBit process technology
„ 8-word/16-byte page read buffer
„ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
„ Secured Silicon Sector region
   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
   – Can be programmed and locked at the factory or by the customer
„ Uniform 64Kword/128KByte Sector Architecture
   – S29GL256P: Two hundred fifty-six sectors
„ 100,000 erase cycles per sector typical
„ 20-year data retention typical 

„ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
„ Suspend and Resume commands for Program and Erase operations
„ Write operation status bits indicate program and erase operation completion
„ Unlock Bypass Program command to reduce programming time
„ Support for CFI (Common Flash Interface)
„ Persistent and Password methods of Advanced Sector Protection
„ WP#/ACC input
    – Accelerates programming time (when VHH is applied) for greater throughput during system production
   – Protects first or last sector regardless of sector protection settings
„ Hardware reset input (RESET#) resets device
„ Ready/Busy# output (RY/BY#) detects program or erase cycle completion




Feature

  • VIO = VCC = 2.7V to 3.6V, highest address sector protected
  • 8-word/16-byte page read buffer
  • 100000 erase cycles per sector typical and 20year data retention typical
  • Write operation status bits indicate program and erase operation completion
  • Unlock bypass program command to reduce programming time
  • Support for CFI (Common Flash Interface)
  • Persistent and password methods of advanced sector protection
  • Suspend and resume commands for program and erase operations
  • Industrial temperature range from -40°C to +85°C
  • WP#/ACC input, protects first or last sector regardless of sector protection settings


(Picture: Pinout)


S29GL256P10TFI010所属分类:存储器,S29GL256P10TFI010 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。S29GL256P10TFI010价格参考¥94.879296,你可以下载 S29GL256P10TFI010中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询S29GL256P10TFI010规格参数、现货库存、封装信息等信息!
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