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LE25S161XBTAG
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LE25S161XBTAG

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 1.65伏~1.95伏 时钟频率: 70 MHz 供应商设备包装: 8-WLCSP (2.92x1.53)
  • 品牌: 安盛美 (onsemi)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 4000

数量 单价 合计
4000+ 17.36485 69459.41200
  • 库存: 3700
  • 单价: ¥17.36485
  • 数量:
    - +
  • 总计: ¥69,459.41
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 电源电压 1.65伏~1.95伏
  • 存储容量 16Mb (2M x 8)
  • 制造厂商 安盛美 (onsemi)
  • 包装/外壳 8-XFBGA, WLCSP
  • 单字、单页写入耗时 700s
  • 时钟频率 70 MHz
  • 工作温度 -40摄氏度~90摄氏度(TA)
  • 供应商设备包装 8-WLCSP (2.92x1.53)

LE25S161XBTAG 产品详情

The LE25S161XATAG is a SPI bus flash memory device with a 16M bit (2048K × 8-bit) configuration. It uses a single power supply. While making the most of the features inherent to a serial flash memory device, the LE25S161XATAG is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S161XATAG also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

Feature

  • Operations power supply :1.65 to 1.95V supply voltage range
  • 1.8 V Low voltage operation
  • Operating frequency : 70 MHz (max)
  • High data transfer rate
  • Temperature range : -40 to +90 °C
  • Fast erase and programming time
  • Serial interface : SPI mode 0, mode 3 supported
  • High reliability
  • Electronic Identification :JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
  • Sector size : 4 K bytes/small sector, 64 K bytes/sector
  • Erase functions :small sector erase (SSE), sector erase (SE), chip erase (CHE)
  • Page program function : 256 bytes/page
  • Status functions : Ready/Busy information, protect information
  • Low operation current :5.0 mA (Low-power program mode, typ)3.5 mA(Low-Power Read mode, typ)
  • Erase time : 10 ms (SSE, typ), 15 ms (SE, typ), 210 ms (CHE, typ)
  • Page program time (tPP) :0.4 ms/256 bytes (typ), 0.7 ms/256 bytes (max)
  • Emergency shutdown of the current consumption :transition to a standby state in less than 20 μs from the active by Write Suspendtransition to a standby state in less than 40 μs from the active by Software Reset
  • High reliability : 100,000 erase/program cycles20 years data retention period

Applications

  • SPI Bus Flash Memory Device
  • Portable Information Devices
  • HDD
LE25S161XBTAG所属分类:存储器,LE25S161XBTAG 由 安盛美 (onsemi) 设计生产,可通过久芯网进行购买。LE25S161XBTAG价格参考¥17.364853,你可以下载 LE25S161XBTAG中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询LE25S161XBTAG规格参数、现货库存、封装信息等信息!

安盛美 (onsemi)

安盛美 (onsemi)

onsemi正在推动节能创新,使客户能够减少全球能源使用。该公司提供全面的节能电源和信号管理、逻辑、离散和定制解决方案组合,以帮助设计工程师解决其在汽车、通信、计算、消费、工业、LED照明、医疗、军事/...

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