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LE25S20MB-AH

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 2Mb (256K x 8) 电源电压: 1.65伏~1.95伏 时钟频率: 40兆赫 供应商设备包装: 8-SOIC/SOPK
  • 品牌: 安盛美 (onsemi)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2000

数量 单价 合计
1+ 2.89513 2.89513
200+ 1.12041 224.08220
500+ 1.08100 540.50150
1000+ 1.06156 1061.56300
  • 库存: 0
  • 单价: ¥2.89514
  • 数量:
    - +
  • 总计: ¥2,123.13
在线询价

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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 电源电压 1.65伏~1.95伏
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 时钟频率 40兆赫
  • 存储容量 2Mb (256K x 8)
  • 单字、单页写入耗时 3.5ms
  • 制造厂商 安盛美 (onsemi)
  • 供应商设备包装 8-SOIC/SOPK

LE25S20MB-AH 产品详情

The LE25S20XATAG is a SPI bus flash memory device with a 2M bit (256K x 8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20XATAG is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications more compact dimensions. The LE25S20XATAG also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle dueto insufficient capacity.

Feature

  • Operations power supply : 1.65 to 1.95 V supply voltage range
  • 1.8 V low voltage operation
  • Operating frequency : 40 MHz (max)
  • High data transfer rate
  • Temperature range : –40 to +85°C
  • Fast erase and programming time
  • Serial interface : SPI mode 0, mode 3 supported
  • High reliability
  • Electronic Identification : JDEC ID, Device ID
  • Sector size : 4K bytes/small sector, 64K bytes/sector
  • Erase functions: Small Sector Erase (SSE), Sector Erase (SE), Chip Erase (CHE)
  • Page program function : 256 bytes/page
  • Status functions : Ready/Busy information, protect information
  • Low operation current: 6.0 mA (Read mode operation current, 40 MHz): 15 mA (Erase or Program mode operating current): 10 µA (CMOS standby current)
  • Erase time: 40 ms (SSE, typ), 80 ms (SE, typ), 300 ms (CHE, typ)
  • Page program time (tPP): 3.0 ms/256 bytes (typ.), 3.5 ms/256 bytes (max.)
  • High reliability: 100,000 erase/program cycles: 20 years data retention period

Applications

  • Serial Flash Memory Devices
  • Smart Phones
  • Wearable Devices
LE25S20MB-AH所属分类:存储器,LE25S20MB-AH 由 安盛美 (onsemi) 设计生产,可通过久芯网进行购买。LE25S20MB-AH价格参考¥2.895139,你可以下载 LE25S20MB-AH中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询LE25S20MB-AH规格参数、现货库存、封装信息等信息!

安盛美 (onsemi)

安盛美 (onsemi)

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