IS62WVS0648FBLL-20NLI-TR
- 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 512Kb (64K x 8) 电源电压: 2.2伏~3.6伏 时钟频率: 20兆赫 供应商设备包装: 8-SOIC
- 品牌: 芯成 (ISSI)
- 交期:5-7 工作日
渠道:
- 自营
- 得捷
- 贸泽
起订量: 3000
数量 | 单价 | 合计 |
---|---|---|
3000+ | 14.81897 | 44456.91900 |
- 库存: 0
- 单价: ¥14.81897
-
数量:
- +
- 总计: ¥44,456.92
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规格参数
- 部件状态 可供货
- 制造厂商 芯成 (ISSI)
- 存储类型 Volatile
- 单字、单页写入耗时 -
- 工作温度 -40摄氏度~85摄氏度(TA)
- 安装类别 表面安装
- 访达时期 -
- 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
- 供应商设备包装 8-SOIC
- 存储格式 SRAM
- 时钟频率 20兆赫
- 电源电压 2.2伏~3.6伏
- 存储容量 512Kb (64K x 8)
- 技术 SRAM-同步,SDR
- 储存接口 SPI - Quad I/O, SDI, DTR
IS62WVS0648FBLL-20NLI-TR 产品详情
ISSI IS62WVS Serial SRAMs are fabricated using high-performance CMOS technology to provide 4�A standby current. These SRAMs are 512K or 1M or 2M bit serial static RAMs organized as 64K or 128K or 256K bytes respectively by 8 bits. The I62WVS serial SRAMs offer 20MHz clock rate, Serial Peripheral Interface (SPI) compatible bus interface, and support unlimited reads and writes to the memory array. The additional interfaces supported are Serial Dual Interface (SDI) and Serial Quad Interface (SQI) for the faster data rate requirements. These SRAMs operate within -40�C to 85�C temperature range and are available in a lead-free 8-pin SOIC package. Typical applications include industrial IoT, advanced driver assistance systems, and medical industry.
芯成 (ISSI)
Integrated Silicon Solution,Inc.(ISSI)是为以下主要市场设计、开发和销售高性能集成电路的技术领导者:(i)汽车,(ii)通信,(iii)数字消费品,以及(iv)工业和...