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CY62136CV30LL-70BAIT

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 2Mb (128K x 16) 电源电压: 2.7伏~3.3伏 供应商设备包装: 48-FBGA(7x7)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 268

数量 单价 合计
268+ 8.11204 2174.02886
  • 库存: 18000
  • 单价: ¥8.11205
  • 数量:
    - +
  • 总计: ¥2,174.03
在线询价

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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 储存接口 并联
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 制造厂商 英飞凌 (Infineon)
  • 包装/外壳 48-TFBGA
  • 单字、单页写入耗时 70ns
  • 访达时期 70 ns
  • 存储容量 2Mb (128K x 16)
  • 供应商设备包装 48-FBGA(7x7)
  • 电源电压 2.7伏~3.3伏

CY62136CV30LL-70BAIT 产品详情

[1]
The and CY62136CV30LL-70BAIT are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.

Feature

• Very high speed: 55 ns and 70 ns
• Voltage range:
— CY62136CV30: 2.7V–3.3V
— CY62136CV33: 3.0V–3.6V
— CY62136CV: 2.7V–3.6V
• Pin-compatible with the CY62136V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = fmax (70-ns speed)
• Low standby power
• Easy memory expansion with CE and OE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA

CY62136CV30LL-70BAIT所属分类:存储器,CY62136CV30LL-70BAIT 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY62136CV30LL-70BAIT价格参考¥8.112048,你可以下载 CY62136CV30LL-70BAIT中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY62136CV30LL-70BAIT规格参数、现货库存、封装信息等信息!
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