[1]
The and CY62136CV30LL-70BVXI are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.
Feature
• Very high speed: 55 ns and 70 ns
• Voltage range:
— CY62136CV30: 2.7V–3.3V
— CY62136CV33: 3.0V–3.6V
— CY62136CV: 2.7V–3.6V
• Pin-compatible with the CY62136V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = fmax (70-ns speed)
• Low standby power
• Easy memory expansion with CE and OE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
