This is a 128Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 16bits
Features
Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x16
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Feature
FEATURES
· VDD=1.7~1.95V
· VDDQ=1.7~1.95V;
· Data width:×16/×32
· Clock rate:200MHz(-5),166MHz(-6),133MHz(-75)
· Partial Array Self-Refresh(PASR)
· Auto Temperature Compensated Self-Refresh(ATCSR)
· Power Down Mode
· Deep Power Down Mode(DPD Mode)
· Programmable output buffer driver strength
· Four internal banks for concurrent operation
· Data mask(DM) for write data
· Clock Stop capability during idle periods
· Auto Pre-charge option for each burst access
· Double data rate for data output
· Differential clock inputs(CK and CK)
· Bidirectional, data strobe(DQS)
·CAS Latency:2 and3
·Burst Length:2,4,8 and 16
·Burst Type:Sequential or Interleave
·64 ms Refresh period
·Interface:LVCMOS compatible
·Support package:60 balls BGA(×16)90 balls BGA(×32)
·Operating Temperature Range: Extended(-25°C~+85°C)
Industrial((-40°C~+85C)
(Picture:Pinout / Diagram)
