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SST26VF016-80-5I-QAE-T

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 80 MHz 供应商设备包装: 8-WSON
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2000

数量 单价 合计
1+ 14.28234 14.28234
200+ 5.52797 1105.59400
500+ 5.33880 2669.40000
1000+ 5.24421 5244.21500
  • 库存: 2000
  • 单价: ¥14.28234
  • 数量:
    - +
  • 总计: ¥10,488.43
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 储存接口 SPI - Quad I/O
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 8-WDFN Exposed Pad
  • 时钟频率 80 MHz
  • 存储容量 16Mb (2M x 8)
  • 单字、单页写入耗时 1.5毫秒
  • 供应商设备包装 8-WSON

SST26VF016-80-5I-QAE-T 产品详情

The SST26VF016-80-5I-QAE-T Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. Operating at frequencies reaching 80 MHz, the SST26VF016-80-5I-QAE-T / SST26VF032 enables minimumlatency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The device’s high performance and small footprint make it the ideal choice for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications and other portable electronic products. Further benefits are achieved with SST’s proprietary, high-performance CMOS SuperFlash® technology,which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs.

Please consider this deviceSST26VF016B

Feature

  • Serial Interface Architecture- Nibble-wide multiplexed I/O’s with SPI-like serial command structure: Mode 0 and Mode 3- Single-bit, SPI backwards compatible: Read, Fast Read, and JEDEC ID Readit/s sustained data rate
  • Continuous Linear Burst Modes– 8/16/32/64 Byte linear burst with wrap-around
  • Low Power Consumption:– Active Read current: 12 mA (typical @ 80 MHz)– Standby Current: 8 µA (typical)
  • Fast Erase and Byte-Program:– Chip-Erase time: 35 ms (typical)– Sector-/Block-Erase time: 18 ms (typical)
  • Page-Program– 256 Bytes per page– Fast Page Program time in 1 ms (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Four 8 KByte top and bottom parameter overlay blocks– Two 32 KByte top and bottom overlay blocks– Uniform 64 KByte overlay blocks - 62 Blocks
  • Software Write Protection– Individual Block-Locking- 64 KByte blocks, two 32 KByte blocks, and eight 8
  • Packages Available– 8-contact WSON (6mm x 5mm)– 8-lead SOIC (200 mil)
  • All devices are RoHS compliant
SST26VF016-80-5I-QAE-T所属分类:存储器,SST26VF016-80-5I-QAE-T 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST26VF016-80-5I-QAE-T价格参考¥14.282340,你可以下载 SST26VF016-80-5I-QAE-T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST26VF016-80-5I-QAE-T规格参数、现货库存、封装信息等信息!
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