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DS28E80Q+T

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 2Kb (2K x 1) 电源电压: 2.97伏~3.63伏 供应商设备包装: 6-TDFN (3x3)
  • 品牌: 模拟器件公司 (Analog)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2500

数量 单价 合计
2500+ 10.19510 25487.76500
  • 库存: 0
  • 单价: ¥10.19511
  • 数量:
    - +
  • 总计: ¥25,487.77
在线询价

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规格参数

  • 部件状态 可供货
  • 单字、单页写入耗时 -
  • 存储类型 Non-Volatile
  • 存储格式 EEPROM
  • 技术 电可擦编程只读存储器
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 制造厂商 模拟器件公司 (Analog)
  • 储存接口 1线
  • 访达时期 2.s
  • 包装/外壳 6-WDFN Exposed Pad
  • 供应商设备包装 6-TDFN (3x3)
  • 存储容量 2Kb (2K x 1)
  • 电源电压 2.97伏~3.63伏

DS28E80Q+T 产品详情

Maxim's DS28E80Q+T is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80Q+T employs a storage cell technology that is resistant to gamma radiation. It has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80Q+T communicates over the single-contact 1-Wire� bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.

Feature

  • High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
    • Resistant Up to 75kGy (kiloGray) of Gamma Radiation
    • Reprogrammable 248 Bytes of User Memory
  • Lower Block Size Provides Greater Flexibility in Programming User Memory
    • Memory is Organized as 8-Byte Blocks
    • Each Block Can Be Written 8 Times
    • User-Programmable Write Protection for Individual Memory Blocks
  • Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
  • Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability
    • Unique Factory-Programmed, 64-Bit Identification Number
    • Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max)
    • Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing
    • ±8kV HBM ESD Protection (typ) for IO Pin
    • 6-Pin TDFN Package

Applications

  • Identification and Calibration Medical Tools/Accessories
  • Identification of Medical Consumables


DS28E80Q+T所属分类:存储器,DS28E80Q+T 由 模拟器件公司 (Analog) 设计生产,可通过久芯网进行购买。DS28E80Q+T价格参考¥10.195106,你可以下载 DS28E80Q+T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询DS28E80Q+T规格参数、现货库存、封装信息等信息!

模拟器件公司 (Analog)

模拟器件公司 (Analog)

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