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SST38VF6402-90-5C-EKE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 64Mb (4M x 16) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 192

数量 单价 合计
1+ 53.95550 53.95550
200+ 20.88227 4176.45460
500+ 20.14661 10073.30600
1000+ 19.78929 19789.29000
  • 库存: 0
  • 单价: ¥53.95551
  • 数量:
    - +
  • 总计: ¥10,359.46
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 时钟频率 -
  • 电源电压 2.7伏~3.6伏
  • 工作温度 0摄氏度~70摄氏度(TA)
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 48-TSOP
  • 单字、单页写入耗时 10s
  • 存储容量 64Mb (4M x 16)
  • 访达时期 90 ns

SST38VF6402-90-5C-EKE 产品详情

The SST38VF6402-90-5C-EKE device is a 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6402-90-5C-EKE writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

Feature

  • Organized as 4M x16
  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Superior Reliability– Endurance: up to 100,000 Cycles minimum– Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 4 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • 128-bit Unique ID
  • Security-ID Feature– 256 Word, user One-Time-Programmable
  • Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord)options available– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
  • Hardware Reset Pin (RST#)
  • Fast Read and Page Read Access Times:– 90 ns Read access time– 25 ns Page Read access times- 4-Word Page Read buffer
  • Latched Address and Data
  • Fast Erase Times:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
  • Erase-Suspend/-Resume Capabilities
  • Fast Word and Write-Buffer ProgrammingTimes:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word(typical)- 16-Word Write Buffer
  • Automatic Write Timing– Internal VPP Generation
  • End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
  • CMOS I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • CFI Compliant
  • Packages Available– 48-lead TSOP– 48-ball TFBGA
  • All non-Pb (lead-free) devices are RoHS compliant
SST38VF6402-90-5C-EKE所属分类:存储器,SST38VF6402-90-5C-EKE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST38VF6402-90-5C-EKE价格参考¥53.955506,你可以下载 SST38VF6402-90-5C-EKE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST38VF6402-90-5C-EKE规格参数、现货库存、封装信息等信息!
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