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The SI3499DV-T1-GE3 is MOSFET P-CH 8V 5.3A 6-TSOP, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI3499DV-GE3, that offers Unit Weight features such as 0.000705 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is 6-TSOP, and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 1.1W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 8V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 5.3A (Ta), and Rds On Max Id Vgs is 23 mOhm @ 7A, 4.5V, and the Vgs th Max Id is 750mV @ 250μA, and Gate Charge Qg Vgs is 42nC @ 4.5V, and the Pd Power Dissipation is 1.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 5 V, and the Id Continuous Drain Current is 5.3 A, and Vds Drain Source Breakdown Voltage is - 8 V, and the Rds On Drain Source Resistance is 23 mOhms, and Transistor Polarity is P-Channel.
The SI3495DV-T1-GE3 is MOSFET P-CH 20V 5.3A 6-TSOP manufactured by VISHAY. The SI3495DV-T1-GE3 is available in SOT-23-6 Thin, TSOT-23-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 20V 5.3A 6-TSOP, P-Channel 20V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP.
The SI3499DV-T1-E3 is MOSFET P-CH 8V 5.3A 6-TSOP manufactured by VISHAY. The SI3499DV-T1-E3 is available in SOT-23-6 Thin, TSOT-23-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 8V 5.3A 6-TSOP, P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, Trans MOSFET P-CH 8V 5.3A 6-Pin TSOP T/R.
