TC58NVG0S3HBAI6

The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block

unit (128 Kbytes  8 Kbytes: 2176 bytes  64 pages).

The TC58NVG0S3HBAI6is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.