DESCRIPTION:
The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages). The TC58NYG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES:
Organization
x8
Memory cell array 2176 128K 8
Register 2176 8
Page size 2176 bytes
Block size (128K 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 2008 blocks
Max 2048 blocks
Power supply
VCC 1.7V to 1.95V
Access time
Cell array to register 25 s max
Serial Read Cycle 25 ns min (CL=30pF)
Program/Erase time
Auto Page Program 300 s/page typ.
Auto Block Erase 3.5 ms/block typ.
Operating current
Read (25 ns cycle) 30 mA max.
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 50 A max
Package
P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8 bit ECC for each 512Byte is required.
(Picture: Pinout)
