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The TC58BYG0S3HBAI6 is EEPROM SLC 1GB NAND 24NM 67VFBGA, that includes Benand? Series, they are designed to operate with a Tray Packaging, Package Case is shown on datasheet note for use in a 67-VFBGA, it has an Operating Temperature range of -40°C ~ 85°C (TA), Interface is designed to work in Parallel, as well as the 1.7 V ~ 1.95 V Voltage Supply, the device can also be used as 67-VFBGA (6.5x8) Supplier Device Package. In addition, the Memory Size is 1G (128M x 8), the device is offered in EEPROM - NAND Memory Type, the device has a 25ns of Speed, and Format Memory is EEPROMs - Serial.
TC58BVM92A5BAJ with user guide manufactured by TOSHIBA. The TC58BVM92A5BAJ is available in BGA Package, is part of the Memory.
TC58BYG0S3HBAI4 with circuit diagram manufactured by Toshiba. The TC58BYG0S3HBAI4 is available in BGA Package, is part of the Memory, , and with support for Flash Memory 1.8V 1Gbit NAND EEPROM, SLC NAND Flash Parallel 1.8V 1G-bit.
