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DS1270AB-70IND

  • 描述:存储类型: Non-Volatile 存储格式: NVSRAM 存储容量: 16Mb (2M x 8) 电源电压: 4.75伏~5.25伏 供应商设备包装: 36-EDIP
  • 品牌: 模拟器件公司 (Analog)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥165.76101
  • 数量:
    - +
  • 总计: ¥165.76
在线询价

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规格参数

  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 时钟频率 -
  • 安装类别 通孔
  • 单字、单页写入耗时 70ns
  • 访达时期 70 ns
  • 存储容量 16Mb (2M x 8)
  • 制造厂商 模拟器件公司 (Analog)
  • 存储格式 NVSRAM
  • 技术 NVSRAM(非易失性SRAM)
  • 电源电压 4.75伏~5.25伏
  • 部件状态 过时的
  • 包装/外壳 36-DIP模块(0.610“,15.49毫米)
  • 供应商设备包装 36-EDIP

DS1270AB-70IND 产品详情

The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Feature

  • 5 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Unlimited write cycles
  • Low-power CMOS operation
  • Read and write access times of 70ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1270Y)
  • Optional ±5% VCC operating range (DS1270AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND


DS1270AB-70IND所属分类:存储器,DS1270AB-70IND 由 模拟器件公司 (Analog) 设计生产,可通过久芯网进行购买。DS1270AB-70IND价格参考¥165.761009,你可以下载 DS1270AB-70IND中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询DS1270AB-70IND规格参数、现货库存、封装信息等信息!

模拟器件公司 (Analog)

模拟器件公司 (Analog)

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