GENERAL DESCRIPTION
The CMOS bq4013/Y/LY is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When Vcc falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.At this time the integral energy source is switched on to sustain the memory until after Vcc retums valid.The bq4013/Y/LY uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.The bq4013/Y/LY requires no external circuitry and is compatible with the industry-standard 1-Mb SRAM pinout.
FEATURES
· Data Retention for at least 10 Years Without Power
· Automatic Write-Protection During Power-up/Power-down Cycles
· Conventional SRAM Operation, Including Unlimited Write Cycles
· Internal lsolation of Battery before Power Application
· 5-V or 3.3-V Operation
· Industry Standard 32-Pin DIP Pinout
(Picture: Pinout)
