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SST26WF064CT-104I/MF

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 64Mb (8M x 8) 电源电压: 1.65伏~1.95伏 时钟频率: 104兆赫 供应商设备包装: 8-WDFN (5x6)
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2000

数量 单价 合计
1+ 3.15283 3.15283
200+ 1.22014 244.02920
500+ 1.17726 588.63400
1000+ 1.15603 1156.03900
  • 库存: 51
  • 单价: ¥3.15283
  • 数量:
    - +
  • 总计: ¥2,312.08
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 电源电压 1.65伏~1.95伏
  • 储存接口 SPI - Quad I/O
  • 包装/外壳 8-WDFN Exposed Pad
  • 时钟频率 104兆赫
  • 存储容量 64Mb (8M x 8)
  • 单字、单页写入耗时 1.5毫秒
  • 供应商设备包装 8-WDFN (5x6)

SST26WF064CT-104I/MF 产品详情

The SST26WF064CT-104I/MF Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. SST26WF064CT-104I/MF also supports full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26WF064CT-104I/MF enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The SST26WF064CT-104I/MF writes (Program or Erase) with a single power supply of 1.65-1.95V and significantly lower power consumption. The device’s low power consumption makes it the ideal choice for wireless and any battery powered devices. Further benefits are achieved with SST’s proprietary, high-performance CMOS SuperFlash® technology, which significantly improves performance and reliability.

Feature

    • Single Voltage Read and Write Operations - 1.65 V - 1.95V
    • Serial Interface Architecture
      • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
      • Nibble-wide multiplexed I/O’s with SPI-like serial command structure
      • Dual-Transfer Rate (DTR) Operation
    • High Speed Clock Frequency
      • 104 MHz max
      • 54 MHz max (DTR)
    • Burst Modes
      • Continuous linear burst
      • 8/16/32/64 Byte linear burst with wrap-around
    • Superior Reliability
      • Endurance: 100,000 Cycles (min)
      • Greater than 100 years Data Retention
    • Low Power Consumption:
      • Active Read current: 15mA (typical@104MHz)
      • Standby current: 10μA(typical)
      • Deep Power-Down current: 2.5μA(typical)
    • Fast Erase Time
      • Sector/Block Erase: 18 ms (typ), 25 ms (max)
      • Chip Erase: 35 ms (typ), 50 ms (max)
    • Page-Program
      • 256 Bytes per page in x1or x4mode
    • Flexible Erase Capability
      • Uniform 4Kbyte sectors
      • Four 8Kbyte top and bottom parameter overlay blocks
      • One 32Kbyte top and bottom overlay block
      • Uniform 64Kbyte overlay blocks
    • Write-Suspend
      • Suspend Program or Erase operation to access another block/sector
    • Software and Hardware Reset mode
    • Supports JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table
    • Software Protection
      • Individual-Block Write Protection with permanent lock-down capability
      • Read Protection on top and bottom 8Kbyte parameter blocks
    • Security ID
      • One-Time Programmable (OTP) 2KByte, Secure ID
      • 64 bit unique, factory pre-programmed identifier
      • User-programmable area
    • Temperature Range
      • Industrial: -40°C to +85°C
    • Packages Available
      • 8-contact WDFN (6mm x 5mm)
      • 8-lead SOIJ (5.28 mm)
      • 16-lead SOIC( 7.50mm)
      • 24-ball TBGA (8mmx6mm)
    • All devices are RoHS compliant
SST26WF064CT-104I/MF所属分类:存储器,SST26WF064CT-104I/MF 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST26WF064CT-104I/MF价格参考¥3.152834,你可以下载 SST26WF064CT-104I/MF中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST26WF064CT-104I/MF规格参数、现货库存、封装信息等信息!
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