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The ARF476FL is RF MOSFET Transistors RF MOSFET (VDMOS), that includes RF Power MOSFET Type, they are designed to operate with a Reel Packaging, Technology is shown on datasheet note for use in a Si, that offers Gain features such as 15 dB, Output Power is designed to work in 900 W, as well as the 910 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 150 MHz Operating Frequency, the device has a 30 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Vgs th Gate Source Threshold Voltage is 3.3 V, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 3 ms.
The ARF475FL is RF MOSFET Transistors RF MOSFET (VDMOS), that includes 3.3 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 30 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 500 V, that offers Type features such as RF Power MOSFET, Transistor Polarity is designed to work in N-Channel, as well as the Si Technology, the device can also be used as 910 W Pd Power Dissipation. In addition, the Output Power is 900 W, the device is offered in 150 MHz Operating Frequency, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 10 A, and Gain is 15 dB, and the Forward Transconductance Min is 3 ms.
The ARF477FL is RF MOSFET Transistors RF MOSFET (VDMOS), that includes Si Technology, they are designed to operate with a RF Power MOSFET Type.
ARFN with EDA / CAD Models manufactured by NS. The ARFN is available in SOT-143 Package, is part of the IC Chips.
