High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.
Feature
• Single 3.3V ±10% Supply
• Fast Read Access Time – 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 105 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Industrial and Automotive Temperature Ranges
• Green (Pb/Halide-free) Packaging Option
