Features
➤ Data retention for at least 10 years without power
➤ Automatic write-protection during power-up/power-down cycles
➤ Conventional SRAM operation, including unlimited write cycles
➤ Internal isolation of battery before power application
➤ Industry standard 32-pin DIP pinout
General Description
The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.
The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation.
At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.
The bq4013/Y uses an extremely low standby current CMOS SRAM, coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
The bq4013/Y requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.
(Picture:Pinout / Diagram)
