The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R256F uses a pseudo - SRAM interface.
■ FEATURES
• Bit configuration : 32,768 words × 8 bits
• Read/write endurance : 1012 times / byte
• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 5 mA (Typ)
Standby current 5 μA (Typ)
• Operation ambient temperature range: − 40 °C to + 85 °C
• Package : 28-pin plastic SOP (FPT-28P-M17)
28-pin plastic SOP (FPT-28P-M01)
28-pin plastic TSOP(1) (FPT-28P-M19)
Both are RoHS compliant
DS501-00011-8v2-E
(Picture:Pinout / Diagram)
