Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed makingthe device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
