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W29N01HVSINF

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 1Gb(128M x 8) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP
  • 品牌: 华邦电子 (Winbond)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥22.01842
  • 数量:
    - +
  • 总计: ¥22.02
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规格参数

  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 FLASH-NAND(SLC)
  • 时钟频率 -
  • 单字、单页写入耗时 25纳秒
  • 访达时期 25纳秒
  • 制造厂商 华邦电子 (Winbond)
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 48-TSOP
  • 存储容量 1Gb(128M x 8)

W29N01HVSINF 产品详情

1. GENERAL DESCRIPTION
The W29N01HVXINF (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions).
The W29N01HVXINF supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
2. FEATURES
· Basic Features
- Density:1Gbit(Single chip solution)
- Vcc:2.7V to 3.6V
- Bus width:×8
- Operating temperature
· Industrial:-40°℃ to 85℃
· Single-Level Cell(SLC) technology.
· Organization
- Density:1G-bit/128M-byte
- Page size
· 2,112 bytes(2048+64 bytes)
- Block size
· 64pages(128K+4K bytes)
· Highest Performance
- Read performance(Max.)
· Random read:25us
· Sequential read cycle:25ns
- Write Erase performance
· Page program time:250us(typ.)
· Block erase time:2ms(typ.)
- Endurance 100,000 Erase/Program Cycles
- 10-years data retention
· Command set
- Standard NAND command set
- Additional command support
· Copy Back
· Lowest power consumption
- Read:25mA(typ.3V),
- Program/Erase:25mA(typ.3V),
- CMOS standby:10uA(typ.)
· Space Efficient Packaging
- 48-pin standard TSOP1
- 48-ball VFBGA-63-ball VFBGA
- Contact Winbond for stacked packages/KGD


(Picture: Pinout)


W29N01HVSINF所属分类:存储器,W29N01HVSINF 由 华邦电子 (Winbond) 设计生产,可通过久芯网进行购买。W29N01HVSINF价格参考¥22.018416,你可以下载 W29N01HVSINF中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询W29N01HVSINF规格参数、现货库存、封装信息等信息!

华邦电子 (Winbond)

华邦电子 (Winbond)

Winbond Electronics Corporation是全球领先的半导体存储解决方案供应商。该公司提供由客户驱动的内存解决方案,并以产品设计、研发、制造和销售服务方面的专家能力为后盾。Winbo...

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