The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
1. 4.5 V drive available
2. Low on-state resistance : RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)
3. Low gate charge : QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
4. Built-in gate protection diode
5. Surface mount device available