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The SGP30N60HSXKSA1 is IGBT 600V 41A 250W TO220-3, that includes Tube Packaging, they are designed to operate with a TO-220-3 Package Case, Input Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in PG-TO220-3, as well as the 250W Power Max, the device can also be used as 41A Current Collector Ic Max. In addition, the Voltage Collector Emitter Breakdown Max is 600V, the device is offered in NPT IGBT Type, the device has a 112A of Current Collector Pulsed Icm, and Vce on Max Vge Ic is 3.15V @ 15V, 30A, and the Switching Energy is 1.15mJ, and Gate Charge is 141nC, and the Td on off 25°C is 20ns/250ns, and Test Condition is 400V, 30A, 11 Ohm, 15V.
The SGP30N60XKSA1 is IGBT 600V 41A 250W TO263, that includes 600V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 2.4V @ 15V, 30A Vce on Max Vge Ic, Test Condition is shown on datasheet note for use in a 400V, 30A, 11 Ohm, 15V, that offers Td on off 25°C features such as 44ns/291ns, Switching Energy is designed to work in 1.29mJ, as well as the TO-220AB Supplier Device Package, the device can also be used as 250W Power Max. In addition, the Packaging is Tube, the device is offered in TO-220-3 Package Case, the device has a Through Hole of Mounting Type, and Input Type is Standard, and the IGBT Type is NPT, and Gate Charge is 140nC, and the Current Collector Pulsed Icm is 112A, and Current Collector Ic Max is 41A.
SGP3D01-LF with circuit diagram manufactured by SAMSUNG. The SGP3D01-LF is available in TQFPPB Package, is part of the IC Chips.
